Low threshold, large Toinjection laser emission from (InGa)As quantum dots

Electronics Letters

Volumn 30, Issue 17, 1994, Pages 1416-1417

  Kirstaedter, N ^a   Ledentsov, N N ^a   Grundmann, M ^a   Bimberg, D ^a   Ustinov, V M ^b   Ruvimov, S S ^b   Maximov, M V ^b   Kop'ev P S ^b   Alferov, Zh I ^b   Werner, P ^c   Gosele U ^c   Heydenreich, J ^c   Richter, U ^c  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b IOFFE INSTITUTE   (Russian Federation)

^c MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

Semiconductor junction lasers; Semiconductor quantum dots

Indexed keywords

MORPHOLOGY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR QUANTUM WELLS; STRAIN; SUBSTRATES;

SEMICONDUCTOR QUANTUM DOTS; SHALLOW STRIPE GEOMETRY; ZERO DIMENSIONAL STATES;

INJECTION LASERS;

EID: 0028499029     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19940939     Document Type: Article

References (8)

1. Arakawa, Y., and Sakakj, H.: ‘Multidimensional quantum well laser and temperature dependence of its threshold current’, Appl. Phys. Lett., 1982, 40, pp. 939-941
2. Mo, Y. M., Savage, D. E., Swartzentruber, B. S., and Lagally, M. G.: ‘Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)’, Phys. Rev. Lett., 1990, 65, pp. 1020-1023
3. Grltndmann, M., Christen, J., Ledentsov, N. N., Böhrer, J., Bimberg, D., Ruvimov, S. S., Werner, P., Richter, U., Gösele, U., Heydenreich, J., Ustinov, V. M., Egorov, A. Y., Kop’ev, P. S., and Alferov, Z. H. I.: ‘Ultranarrow luminescence lines from single quantum dots’, to be published in Phys. Rev. Lett.
4. Tersofe, J., and Tromp, R. M.: ‘Shape transition in growth of strained islands: Spontaneous formation of quantum wires’, Phys. Rev. Lett., 1993, 70, pp. 2782-2785
5. Leonard, D., Krishnamurthy, M., Reaves, C., Denbars, S. P., and Petroff, P. M.: ‘Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfaces’, Appl. Phys. Lett., 1993, 63, pp. 3203-3205
6. Wang, P. D., Ledentsov, N. N., Sotomayor Torres, C., Kop’ev, P. S., and Ustinov, V. M.: ‘Optical characterization of submonolayer and monolayer InAs structures grown in a GaAs mattrix on (100) and high-index surfaces’, Appl. Phys. Lett., 1994, 64, pp. 1526-1528
7. Willardson, R. K., and Beer, A. C.: ‘Strained-layer superlattices: Physics, semiconductors and semimetals’ (Academic Press, Inv. Boston San Diego New York London Sydney Tokyo Toronto 1990, 32), pp. 17-53
8. Hell Wege, K.-H.: ‘Numerical data and functional relationships in science and technology’, in: ‘Landolt-Börnstein new series groups III-V’ (Springer-Verlag Berlin Heidelberg New York 1982, 22a), pp. 82-144