A 1.8-V 128-Mb mobile DRAM with double boosting pump, hybrid current sense amplifier, and dual-referenced adjustment scheme for temperature sensor

IEEE Journal of Solid-State Circuits

Volumn 38, Issue 4, 2003, Pages 631-640

  Sim, Jae Yoon ^a   Yoon, Hongil ^b   Chun, Ki Chul ^a   Lee, Hyun Seok ^a   Hong, Sang Pyo ^a   Lee, Kyu Chan ^a   Yoo, Jei Hwan ^a   Seo, Dong Il ^a   Cho, Soo In ^a  

^a SAMSUNG Electronics   (South Korea)

^b Yonsei University   (South Korea)

Author keywords

Charge pump; DRAM; Sense amplifier; Temperature sensor

Indexed keywords

AMPLIFIERS (ELECTRONIC); CAPACITORS; DIGITAL CIRCUITS; ELECTRIC INVERTERS; ELECTRIC RESISTANCE; MOS DEVICES; SEMICONDUCTOR DIODES; SENSORS;

CHARGE PUMP; DOUBLE BOOSTING PUMP; DUAL-REFERENCED ADJUSTMENT SCHEME; HYBRID CURRENT SENSE AMPLIFIER; TEMPERATURE SENSOR;

DYNAMIC RANDOM ACCESS STORAGE;

EID: 0344089098     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2003.809514     Document Type: Article

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