Deposition of PZT thin films by pulsed laser ablation for MEMS application

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3242, Issue , 1997, Pages 372-379

  Maeda, Ryutaro ^a   Kikuchi, Kaoru ^a   Schroth, Andeas ^b   Umezawa, Akihiko ^a   Matsumoto, Sohei ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b Micromachine Center   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABLATION; COLLOIDS; DEPOSITION; DEPOSITION RATES; EXCIMER LASERS; GAS LASERS; GELATION; GELS; KRYPTON; LASER ABLATION; LASER APPLICATIONS; LASERS; MEMS; MICROELECTROMECHANICAL DEVICES; MICROMACHINING; NANOCANTILEVERS; NANOSTRUCTURED MATERIALS; NONVOLATILE STORAGE; OPTICAL INSTRUMENTS; OXIDE MINERALS; PEROVSKITE; PIEZOELECTRIC ACTUATORS; PIEZOELECTRIC MATERIALS; PIEZOELECTRIC TRANSDUCERS; PULSED LASER APPLICATIONS; RADIATION EFFECTS; SEMICONDUCTING LEAD COMPOUNDS; SOL-GEL PROCESS; SOL-GELS; SOLIDS; SOLS; SUBSTRATES; THIN FILM DEVICES; THIN FILMS; VACUUM DEPOSITION;

AFM CANTILEVERS; DEPOSITED LAYERS; DEPOSITION PARAMETERS; EXCIMER LASER ABLATIONS; FILM DEPOSITIONS; FILM PROPERTIES; FILM SENSORS; MEMS APPLICATIONS; MICRO-OPTICAL DEVICES; MICROMACHINED CANTILEVERS; POWER DENSITIES; PZT FILMS; PZT THIN FILMS; RADIATION CONDITIONS; RELATIVE DIELECTRIC CONSTANTS; ROOM TEMPERATURE DEPOSITIONS; SMART MEMS; SPUTTERING PROCESSES; THICKNESS UNIFORMITIES; ULTRA HIGHS; UV LASER ABLATIONS; WAFER SIZES; XRD ANALYSES;

PULSED LASER DEPOSITION;

EID: 0343947898     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.293559     Document Type: Conference Paper

References (12)

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