Investigation of the SiO2/Si(111) interface by means of angle-scanned photoelectron diffraction

Journal of Electron Spectroscopy and Related Phenomena

Volumn 114-116, Issue , 2001, Pages 431-436

  Dreiner, S ^a   Schurmann M ^a   Westphal, C ^a,b   Zacharias, H ^a  

^a UNIVERSITY OF MÜNSTER   (Germany)

^b TU DORTMUND UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; COMPUTER SIMULATION; DATA REDUCTION; FILM GROWTH; INTERFACES (MATERIALS); OXIDATION; PHOTOELECTRON SPECTROSCOPY; PHOTOEMISSION; SEMICONDUCTING FILMS; SEMICONDUCTOR DEVICE MODELS; SILICA;

ANGLE-SCANNED PHOTOELECTRON DIFFRACTION;

SEMICONDUCTING SILICON;

EID: 0343898021     PISSN: 03682048     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0368-2048(00)00310-8     Document Type: Article

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