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Volumn 17, Issue 6, 1996, Pages 261-263

Amorphous-silicon-on-glass field emitter arrays

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; CHROMIUM; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTROCHEMICAL ELECTRODES; ELECTRON EMISSION; EVAPORATION; SEMICONDUCTING GLASS; SPUTTER DEPOSITION; THICK FILMS; X RAY DIFFRACTION;

EID: 0030170553     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.496451     Document Type: Article
Times cited : (7)

References (6)
  • 1
    • 0024304102 scopus 로고
    • Advanced technology: Flat cold-cathode CRT's
    • I. Brodie, "Advanced technology: Flat cold-cathode CRT's," Inform. Display, vol. 1, pp. 17-19, 1989.
    • (1989) Inform. Display , vol.1 , pp. 17-19
    • Brodie, I.1
  • 2
  • 3
    • 0029492943 scopus 로고
    • Control of emission characteristics of silicon field emitter arrays by ion implantation technique
    • Portland
    • S. Kanemaru, T. Hirano, H. Tanoue, and J. Itoh, "Control of emission characteristics of silicon field emitter arrays by ion implantation technique," in Tech. Dig. 8th. Int. Vac. Microelectronics Conf., Portland, 1995, pp. 56-59.
    • (1995) Tech. Dig. 8th. Int. Vac. Microelectronics Conf. , pp. 56-59
    • Kanemaru, S.1    Hirano, T.2    Tanoue, H.3    Itoh, J.4
  • 4
    • 0005264543 scopus 로고
    • Fabrication of double-gated Si field emitter arrays for focused electron beam generation
    • J. Itoh, Y. Tohma, K. Marikawa, S. Kanemaru, and K. Shimizu, "Fabrication of double-gated Si field emitter arrays for focused electron beam generation," J. Vac. Sci. Technol., vol. B13, pp. 1968-1972, 1995.
    • (1995) J. Vac. Sci. Technol. , vol.B13 , pp. 1968-1972
    • Itoh, J.1    Tohma, Y.2    Marikawa, K.3    Kanemaru, S.4    Shimizu, K.5
  • 5
    • 0029519908 scopus 로고
    • Emission characteristics of ion-implanted silicon emitter tips
    • T. Hirano, S. Kanemaru, H. Tanoue, and J. Itoh, "Emission characteristics of ion-implanted silicon emitter tips," Jpn. J. Appl. Phys., vol. 34, pp. 6907-6911, 1995.
    • (1995) Jpn. J. Appl. Phys. , vol.34 , pp. 6907-6911
    • Hirano, T.1    Kanemaru, S.2    Tanoue, H.3    Itoh, J.4
  • 6
    • 0011811896 scopus 로고
    • Scaling of emission currents and of current fluctuations of gated silicon emitter ensembles
    • H. H. Busta, J. E. Pogemiller, and B. J. Zimmerman, "Scaling of emission currents and of current fluctuations of gated silicon emitter ensembles," J. Vac. Sci. Technol., vol. B12, pp. 689-692, 1994.
    • (1994) J. Vac. Sci. Technol. , vol.B12 , pp. 689-692
    • Busta, H.H.1    Pogemiller, J.E.2    Zimmerman, B.J.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.