Pore propagation directions in P+ porous silicon

Journal of Porous Materials

Volumn 7, Issue 1, 2000, Pages 57-61

  Vazsonyi E ^a   Battistig, G ^a   Horvath Z E ^a   Fried, M ^a   Kadar G ^a   Paszti F ^b   Cantin, J L ^c   Vanhaeren, D ^d   Stalmans, L ^d   Poortmans, J ^d  

^a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^b WIGNER RESEARCH CENTRE FOR PHYSICS   (Hungary)

^c UNIVERSITÉ PARIS DESCARTES   (France)

^d IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC OXIDATION; CRYSTAL ORIENTATION; ELECTRON SPIN RESONANCE SPECTROSCOPY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON WAFERS; SURFACE STRUCTURE;

PORE PROPAGATION;

POROUS SILICON;

EID: 0343603368     PISSN: 13802224     EISSN: None     Source Type: Journal    
DOI: 10.1023/a:1009642605473     Document Type: Article

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