Observation of (100) surfaces in p-type porous silicon by electron paramagnetic resonance

Thin Solid Films

Volumn 276, Issue 1-2, 1996, Pages 241-243

  Cantin, J L ^a   Schoisswohl, M ^a   Von Bardeleben, H J ^a   Hadj Zoubir, N ^b   Vergnat, M ^b  

^a SORBONNE UNIVERSITÉ   (France)

^b UNIVERSITÉ DE LORRAINE   (France)

Author keywords

Electron spin resonance (ESR); Interfaces; Silicon oxide; Surface morphology

Indexed keywords

ANNEALING; CHEMICAL BONDS; CRYSTAL DEFECTS; CRYSTAL ORIENTATION; INTERFACES (MATERIALS); MORPHOLOGY; OXIDATION; OXIDES; PARAMAGNETIC RESONANCE; SEMICONDUCTING SILICON; SURFACES; THERMAL EFFECTS;

SILICON OXIDE;

POROUS SILICON;

EID: 0030123044     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(95)08062-7     Document Type: Article

References (8)

1. H.J. von Bardeleben, C. Ortega, A. Grosman, V. Morazzani, J. Siejka and D. Stievenard, J. Lumin., 57 (1993) 301.
2. M. Schoisswohl, H.J. von Bardeleben, V. Morazzani, A. Grosman, C. Ortega, St. Frohnhoff, M.G. Berger and H. Münder, Thin Solid Films, 255 (1995) 123.
3. A. Grosman, M. Chamarro, V. Morazzani, C. Ortega, S. Rigo, J. Siejka and H.J. von Bardeleben, J. Lumin., 57 (1993) 13.
4. A. Stesmans, Semicond. Sci. Technol., 4 (1989) 1000.
5. K.L. Brower, Semicond. Sci. Technol., 4 (1989) 970.
6. J.L Cantin, M. Schoisswohl, H.J. von Bardeleben, Hadj Zoubir and M. Vergnat, Phys. Rev., B52 (1995) R11599.
7. N. Hadj Zoubir, M. Vergnat, T. Delatour, A. Burneau and Ph. de Donato, Appl. Phys. Lett., 65 (1994) 82.
8. J.L Cantin, M. Schoisswohl, A. Grosman, S. Lebib, C. Ortega, H.J. von Bardeleben, É. Vazsonyi, G. Jalsovszky and J. Erostyák, E-MRS Meeting, Strasbourg, May 1995 (to be published in Thin Solid Films).