Formation of hydrogen-related traps in electron-irradiated n-type silicon by wet chemical etching

Materials Research Society Symposium - Proceedings

Volumn 513, Issue , 1998, Pages 363-368

  Tokuda, Yutaka ^a   Shimada, Hitoshi ^a  

^a AICHI INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON BEAMS; ETCHING; HYDROGEN; IRRADIATION; POINT DEFECTS;

ELECTRON TRAPS; WET CHEMICAL ETCHING;

SILICON WAFERS;

EID: 0031635312     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-513-363     Document Type: Conference Paper

References (12)