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Volumn 8, Issue 12, 1998, Pages 430-431

High-Gain Cascode MMIC's in Coplanar Technology at W-Band Frequencies

Author keywords

Cascode; Coplanar waveguide; MMIC; PM HEMT; W band

Indexed keywords

AMPLIFIERS (ELECTRONIC); HIGH ELECTRON MOBILITY TRANSISTORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; WAVEGUIDES;

EID: 0032290834     PISSN: 10518207     EISSN: None     Source Type: Journal    
DOI: 10.1109/75.746765     Document Type: Article
Times cited : (29)

References (9)
  • 1
    • 0016520573 scopus 로고
    • Performance of dual-gate GaAs MESFET's as gain-controlled low noise amplifiers and high speed modulators
    • June
    • C. A. Liechti, "Performance of dual-gate GaAs MESFET's as gain-controlled low noise amplifiers and high speed modulators," IEEE Trans. Microwave Theory Tech., vol. MTT-23, pp. 461-469, June 1975.
    • (1975) IEEE Trans. Microwave Theory Tech. , vol.MTT-23 , pp. 461-469
    • Liechti, C.A.1
  • 3
    • 0026727389 scopus 로고
    • 5-60 GHz high-gain distributed amplifier utilizing InP cascode HEMT's
    • Oct.
    • C. Yuen, Y. C. Pao, and N. G. Bechtel, "5-60 GHz high-gain distributed amplifier utilizing InP cascode HEMT's," in IEEE GaAs 1C Symp. Dig., Oct. 1991, pp. 319-322.
    • (1991) IEEE GaAs 1C Symp. Dig. , pp. 319-322
    • Yuen, C.1    Pao, Y.C.2    Bechtel, N.G.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.