Growth and characterization of gallium selenide crystals for far-infrared conversion applications

Journal of Crystal Growth

Volumn 163, Issue 4, 1996, Pages 398-402

  Singh, N B ^a   Henningsen, T ^a   Balakrishna, V ^a   Suhre, D R ^a   Fernelius, N ^b   Hopkins, F K ^b   Zelmon, D E ^b  

^a NORTHROP GRUMMAN CORPORATION   (United States)

^b Materials Department   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; MATERIALS TESTING; SEMICONDUCTING GALLIUM COMPOUNDS; SINGLE CRYSTALS; SYNTHESIS (CHEMICAL);

BRIDGMAN METHOD; FAR INFRARED CONVERSION; GALLIUM ARSENIDE CRYSTALS;

CRYSTAL GROWTH;

EID: 0030564225     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00983-3     Document Type: Article

References (6)

1. N. Fernelius, Progr. Crystal Growth Characterization 28 (1994) 27.
2. G. Fischer and J.L. Brebner, J. Phys. Chem. Solids 23 (1962) 1363.
3. W.Y. Liang, J. Phys. C: Solid State Phys. 8 (1975) 1763.
4. R.H. Bube and E. Lind, Phys. Rev. 115 (1959) 1159.
5. C.R. Whitehouse and A. Balchin, J. Crystal Growth 43 (1978) 727.
6. E. Mooser and M. Schulter, Philos. Mag. 23 (9171) 811.