Investigation of the growth mechanism of layered semiconductor GaSe

Applied Surface Science

Volumn 113-114, Issue , 1997, Pages 38-42

  Ueno, Keiji ^a   Takeda, Natsuko ^a   Sasaki, Kentaro ^a   Koma, Atsushi ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

Atomic force microscope; GaSe; Growth mechanism; Layered material; Polytype; Van der Waals epitaxy

Indexed keywords

ATOMIC FORCE MICROSCOPY; MOLECULAR BEAM EPITAXY; MOLYBDENUM COMPOUNDS; MULTILAYERS; SEMICONDUCTING GALLIUM COMPOUNDS; SINGLE CRYSTALS; SURFACES; THIN FILMS; VAN DER WAALS FORCES;

GALLIUM SELENIDE; HETEROEPITAXIAL FILMS; MOLYBDENUM SULFIDE; POLYTYPES; VAN DER WAALS EPITAXY;

SEMICONDUCTOR GROWTH;

EID: 0031547190     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00837-9     Document Type: Article

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