Pseudo spin valve magnetoresistive random access memory

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 16, Issue 3, 1998, Pages 1794-1800

  Everitt, B A ^a   Pohm, A V ^a  

^a NVE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS LINE; CELL SELECTION; CELL STRUCTURE; DIFFERENTIAL OUTPUT SIGNALS; EXPERIMENTAL DATA; FAST SWITCHING; LINE CURRENTS; MAGNETIC LAYERS; MAGNETORESISTIVE RANDOM ACCESS MEMORIES; MASK LAYER; MEMORY CELL; MODE OF OPERATIONS; NON-VOLATILE MEMORY TECHNOLOGY; OUTER LAYER; PSEUDO SPIN VALVES; READ OPERATION; SANDWICH MATERIALS; SIGNAL LEVEL; SINGLE DOMAINS; SINGLE-BIT; SPIN VALVE; STATIC TORQUE; SUBMICRON; SWITCHING CHARACTERISTICS; SWITCHING THRESHOLDS; TEST STRUCTURE; THRESHOLD CHARACTERISTICS; TRANSFER CHARACTERISTICS; TRANSFER CURVES;

CELLS; ELECTRIC RESISTANCE; GALVANOMAGNETIC EFFECTS; MAGNETIC DOMAINS; MAGNETIC FILM STORAGE; MAGNETIC RECORDING; MAGNETIC STORAGE; SEMICONDUCTOR STORAGE; SPIN DYNAMICS; STATIC RANDOM ACCESS STORAGE;

GIANT MAGNETORESISTANCE;

EID: 0342639083     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581109     Document Type: Article

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