Radiation hardened 64K/256K EEPROM technology

Biennial IEEE International Nonvolatile Memory Technology Conference

Volumn , Issue , 1996, Pages 67-70

  Williams, D ^a   Adams, D ^a   Bishop, R ^a   Knoll, M ^a   Murray, J ^a   McClintock, R ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPLICATION SPECIFIC INTEGRATED CIRCUITS; CMOS INTEGRATED CIRCUITS; INTEGRATED CIRCUIT LAYOUT; NITRIDES; OXIDES; RADIATION EFFECTS; RADIATION HARDENING; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR STORAGE; TRANSISTORS;

CMOS PROCESS TECHNOLOGY; EEPROM DEVICES; FLOATING GATE DEVICES; MEMORY TRANSISTORS; SILICON OXIDE NITRIDE OXIDE SEMICONDUCTOR TECHNOLOGY; TOTAL DOSE RADIATION HARDNESS;

PROM;

EID: 0029695671     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)