Characterization of trace organic contamination on silicon surfaces in semiconductor manufacturing

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5133, Issue , 2003, Pages 136-149

  Saga, Koichiro ^a   Hattori, Takeshi ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CONTAMINATION; MOS CAPACITORS; SEMICONDUCTING FILMS; SEMICONDUCTOR DEVICES; SURFACE TREATMENT; ULSI CIRCUITS;

THERMAL PROCESSING;

SILICON WAFERS;

EID: 0242721653     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (23)

1. T. Hattori, in Contamination Control and Defect Reduction in Semiconductor Manufacturing III/1993, D. N. Schmidt, Editor, PV94-9, pp. 3-14, The Electrochemical Society Proceedings Series, Pennington, NJ (1994).
2. T. Hattori, in Characterization and Metrology for ULSI Technology/2000, D. G. Seiler, A. C. Diebold, T. J. Shaffner, R. McDonald, W. M. Bullis, P. J. Smith, and E. M. Secula, Editors, pp. 275-284, AIP Conference Proceedings, 550, New York (2001).
3. T. Hattori: Ultraclean Surface Processing of Silicon Wafers, Springer-Verlag, Heidelberg (1998).
4. N. Munter, B.O. Kolbesen, W. Storm and T. Muller, in Ultra Clean Processing of Silicon Surfaces/2000, M. Heyns, P. Mertens, and M. Meuris, Editors, Ultra Clean Processing of Silicon Surfaces 2000, Scitec Publications Ltd, Switzerland, pp.115-118.
5. W. Kern and D. A. Puotinen: RCA Review, 31, 187 (1970).
6. R. R. Kunz, V. Liberman, D. K. Downs, in Optical Microlithography XIII, Christopher J. Progler, Editor, Proceedings of SPIE, 4000, pp. 474-487 (2000).
7. S. R. Kasi, M. Liehr, P. Thiry, H. Dallaporta, M. Offenberg, Appl. Phys. Lett., 59, 108 (1991).
8. K. Saga and T. Hattori, Appl. Phys. Lett., 71, 3670 (1997).
9. M. Tamaoki, K. Nishiki, A. Shimazaki, Y. Sasaki, S. Yanagi: in Proceedings of IEEE/SEMI Advanced Semiconductor Manufacturing Conference/1995, Boston, pp.322-326 (1995).
10. K. Saga and T. Hattori, J. Electrochem. Soc., 144, L253 (1997).
11. K. Saga and T. Hattori, J. Electrochem. Soc., 143, 3279 (1996).
12. A. Roche, C.Wyon, S. Marthon, J. F. Ple, M. Oliver, N. Rochat, A. Chabli, A. Danel, M. Juhel and F. Tardif, in Characterization and Metrology for ULSI Technology/2000, D. G. Seiler, A. C. Diebold, T. J. Shaffner, R. McDonald, W. M. Bullis, P. J. Smith, and E. M. Secula, Editors, pp. 297-301, AIP Conference Proceedings, 550, New York, (2001).
13. S. Ye, T. Ichihara, and K. Uosaki, Appl. Phys. Lett, 75, 1562 (1999).
14. N. Rochat, M. Olivier, A. Chabli, F. Conne, and G. Leferuvre, Appl. Phys. Lett, 77, 2249 (2000).
15. L. Ling, S. Kuwabara, T. Abe, and F. Shimura, J. Appl. Phys., 73, 3018 (1993).
16. K. Endo, K. Maruo, M. Niwano, T. Hayashi, M. Misako, and K. Suzuki, in Conference Proceedings, pp. 161-164, International Symposium of Semiconductor Manufacturing, Tokyo, Oct. 15-17, 2002.
17. K. Budde, W. Holzapfel, in Semiconductor Silicon/1998, H. R. Huff, U. Gosele, H. Tsuya, Editors, PV98-1, pp. 1496-1510, The Electrochemical Society Proceedings Series, Pennington, NJ (1998).
18. "Standard Test Method for Analyzing Organic Contaminants on Silicon Wafer Surfaces by Theamal Desorption Gas Chromatography", ASTM F 1982-99, ASTM, West Conshohocken, 1999.
19. P. J. Smith and P. M. Lindley, in Characterization and Metrology for ULSI Technology/1998, D. G. Seiler, A. C. Diebold, W. M. Bullis, T. J. Shaffner, R. McDonald, and E. J. Walters, Editors, AIP Conference Proceedings, pp. 133-139, 449, New York (1998).
20. H. Kambara, Y. Mitsui, and I. Kanomata, Anal. Chem., 51, 1447 (1979).
21. th International Conference on SIMS and Related Techniques, pp. 37-40, Munster, Oct. 1-6, 1995.
22. N. Yabumoto, in in Characterization and Metrology for ULSI Technology/1998, D. G. Seiler, A. C. Diebold, W. M. Bullis, T. J. Shaffner, R. McDonald, and E. J. Walters, Editors, AIP Conference Proceedings, pp. 696-701, 449, New York (1998).
23. P. Williams and J. E. Baker, Appl. Phys. Lett, 36, 842 (1980).