Multiple internal reflection infrared spectroscopy using two-prism coupling geometry: A convenient way for quantitative study of organic contamination on silicon wafers

Applied Physics Letters

Volumn 77, Issue 14, 2000, Pages 2249-2251

  Rochat, Névine ^a   Olivier, Michel ^a   Chabli, Amal ^a   Conne, Francis ^a   Lefeuvre, Georges ^a   Boll Burdet, Christophe ^b  

^a CEA LETI   (France)

^b Apibio Zone ASTEC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0041372498     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1314885     Document Type: Article

References (15)

1. K. J. Budde, W. J. Holzapfel, and M. M. Beyer, J. Electrochem. Soc. 142, 888 (1995).
2. S. Yasui, in Ultra Clean Surface Processing of Silicon Wafers, edited by T. Hattori (Springer, Berlin, 1998), p. 474.
3. S. Ye, T. Ichihara, and K. Uosaki, Appl. Phys. Lett. 75, 1562 (1999).
4. M. Endo, H. Yoshida, Y. Mueda, N. Miyamoto, and M. Niwano, Appl. Phys. Lett. 75, 519 (1999).
5. The main loss of throughput is due to the mismatch between the size of the incident beam and the width of the coupling region, see M. Olivier, F. Martin, A. Chabli, G. Lefeuvre, F. Conne, and N. Rochat, Phys. Status Solidi A 175, 137 (1999).
6. With p polarization very similar results were observed but, due to the particular optical arrangement, s-polarization was used.
7. N. J. Harrick, Internal Reflection Spectroscopy (Harrick Scientific, New York, 1979), p. 51.
8. The validity of the proposed numerical approach relies on the absence of preferential orientation of the species. This seems to be the case because no influence of the polarization was noticed (see Ret. 6).
9. C = 1.45 corresponds to a plausible mean value.
10. K. Nakanishi and P. H. Solomon, Infrared Absorption Spectroscopy (Holden-Day, Oakland, CA, 1977), p. 14.
11. These two organic compounds are oxidizing products of BHT (2,6-di-t-butyl-4-methyl-phenol). BHT and DBP originate from additives in the polypropylene plastic material.
12. K. Saga and T. Hattori, J. Electrochem. Soc. 143, 3279 (1996).
13. K. J. Budde, Mater. Res. Soc. Symp. Proc. 386, 165 (1995).
14. No valuable comparison with the results given in Ref. 3 can be made because in that case the silicon surface was hydrophobic in contrast with the hydrophilic situation encountered here.
15. 2 MIR absorbance and [C] the carbon surface concentration.