0.3-μm gate length P-channel AlGaAs/InGaAs heterostructure field effect transistors with high cut-off frequency

IEEE Electron Device Letters

Volumn 18, Issue 2, 1997, Pages 63-65

  Hara, Naoki ^a   Suehiro, Haruyoshi ^a   Shima, Masashi ^a   Kuroda, Shigeru ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC VARIABLES MEASUREMENT; GATES (TRANSISTOR); HETEROJUNCTIONS; ION IMPLANTATION; LEAKAGE CURRENTS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

COMPLEMENTARY HETEROSTRUCTURE FIELD EFFECT TRANSISTORS; THRESHOLD VOLTAGE;

FIELD EFFECT TRANSISTORS;

EID: 0031078788     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.553045     Document Type: Article

References (7)

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