Theoretical study of pion damage in A3B5 compounds

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 413, Issue 2-3, 1998, Pages 242-248

  Lazanu, S ^a   Lazanu, I ^b   Biggeri, U ^c   Sciortino, S ^c  

^a NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

^b UNIVERSITY OF BUCHAREST   (Romania)

^c INFN SEZIONE DI FIRENZE   (Italy)

Author keywords

A3B5 semiconductors; Pions; Radiation damage

Indexed keywords

COMPUTATIONAL METHODS; CRYSTAL DEFECTS; CRYSTAL LATTICES; ENERGY DISSIPATION; RADIATION DAMAGE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING SILICON;

GALLIUM PHOSPHIDE; INDIUM ANTIMONIDE; INDIUM ARSENIDE; PION-NUCLEUS INTERACTIONS; RECOIL ENERGY REDISTRIBUTION;

HIGH ENERGY PHYSICS;

EID: 0032136637     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(98)00658-5     Document Type: Article

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