LightMOS a new Power Semiconductor Concept dedicated for Lamp Ballast Application

Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)

Volumn 2, Issue , 2003, Pages 768-772

  Griebl, Erich ^a   Lorenz, Leo ^a   Pürschel, Marco ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC FAULT CURRENTS; ELECTRIC POTENTIAL; MOS DEVICES; MOSFET DEVICES; SEMICONDUCTOR DIODES; SWITCHING;

JUNCTION TEMPERATURE;

BALLASTS (LAMP);

EID: 0242676829     PISSN: 01972618     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. T. Laska, M. Münzer, F. Pfirsch, C. Schäffer, T. Schmidt, "The Field Stop IGET (FS IGET) - A New Power Device Concept with a Great Improvement Potential", Proceedings of the 12th ISPSD, pp.355-358, 2000
2. H. Rüthing, F. Umbach, O. Hellmund, P. Kanschat, G. Schmidt, "600V-IGBT3: Trench Field Stop Technology in 70 μm Ultra Thin Wafer Technology", Proceedings of the 15th ISPSD, pp.63-66, 2003
3. H. Hüsken, F. Stückler, "Field Stop IGBT with MOS-like (tailless) turn-off", Proceedings of the 15th ISPSD, pp.338-340, 2003