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Volumn , Issue , 2003, Pages 91-94

Non-linear transmission lines for pulse shaping in silicon

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITORS; COMPUTER SIMULATION; ELECTRIC INDUCTORS; INDUCTANCE; MOS DEVICES; PARTIAL DIFFERENTIAL EQUATIONS; PULSE SHAPING CIRCUITS; SEMICONDUCTING SILICON; SOLITONS; TRANSMISSION LINE THEORY; VARACTORS;

EID: 0242611992     PISSN: 08865930     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (23)

References (10)
  • 2
    • 0242509384 scopus 로고
    • Cambridge University Press, Cambridge
    • P. G. Drazin, and R. S. Johnson, Solitons, Cambridge University Press, Cambridge, 1989.
    • (1989) Solitons
    • Drazin, P.G.1    Johnson, R.S.2
  • 6
    • 0007824544 scopus 로고
    • Nonlinear Transmission Lines for Picosecond Pulse, Impulse and Millimeter-Wave Harmonic Generation
    • Ph.D. dissertation, University of California Santa Barbara, July
    • M. G. Case, Nonlinear Transmission lines for Picosecond Pulse, Impulse and Millimeter-Wave Harmonic Generation, Ph.D. dissertation, University of California Santa Barbara, July 1993.
    • (1993)
    • Case, M.G.1
  • 7
    • 0033100577 scopus 로고    scopus 로고
    • Study of the current-voltage characteristics in MOS capacitors with Si-implanted gate oxide
    • March
    • E. Kameda, T. Matsuda, Y. Emura, and T. Ohzone, "Study of the Current-Voltage Characteristics in MOS Capacitors with Si-Implanted Gate Oxide," Solid-State Electronics, vol. 43, no. 3, pp. 555-63, March 1999.
    • (1999) Solid-State Electronics , vol.43 , Issue.3 , pp. 555-563
    • Kameda, E.1    Matsuda, T.2    Emura, Y.3    Ohzone, T.4
  • 8
    • 18744388392 scopus 로고    scopus 로고
    • Validity of mobility universality for scaled metal-oxide-semiconductor field-effect transistors down to 100 nm gate length
    • Nov.
    • S. Matsumoto, K. Hisamitsu, M. Tanaka, H. Ueno, M. Miura-Mattausch, Mattausch H, et al. "Validity of Mobility Universality for Scaled Metal-Oxide-Semiconductor Field-Effect Transistors Down to 100 nm Gate Length," Journal of Applied Physics, vol. 92, no. 9, pp. 5228-32, Nov. 2002.
    • (2002) Journal of Applied Physics , vol.92 , Issue.9 , pp. 5228-5232
    • Matsumoto, S.1    Hisamitsu, K.2    Tanaka, M.3    Ueno, H.4    Miura-Mattausch, M.5    Mattausch, H.6
  • 9
    • 0035340351 scopus 로고    scopus 로고
    • A new model of gate capacitance as a simple tool to extract MOS parameters
    • May
    • L. Larcher, P. Pavan, F. Pellizzer, G. Ghidini, "A New Model of Gate Capacitance as a Simple Tool to Extract MOS Parameters," IEEE Transactions on Electron Devices, vol. 48, no. 5, pp. 935-45, May 2001.
    • (2001) IEEE Transactions on Electron Devices , vol.48 , Issue.5 , pp. 935-945
    • Larcher, L.1    Pavan, P.2    Pellizzer, F.3    Ghidini, G.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.