Highly manufacturable corner rounding solution for 0.18 μm shallow trench isolation

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 661-663

  Chang, C P ^a   Pai, C S ^a   Baumann, F H ^a   Liu, C T ^a   Rafferty, C S ^a   Pinto, M R ^a   Lloyd, E J ^a   Bude, M ^a   Klemens, F P ^a   Miner, J F ^a   Cheung, K P ^a   Colonell, J I ^a   Lai, W Y C ^a   Vaidya, H ^a   Hillenius, S J ^a  

^a NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL MECHANICAL POLISHING (CMP); HIGH TEMPERATURE REOXIDATION (HTR) PROCESS; SHALLOW TRENCH ISOLATION (STI);

CHEMICAL POLISHING; CORRELATION METHODS; ELECTRIC PROPERTIES; HIGH TEMPERATURE OPERATIONS; MASKS; NITRIDES; OXIDATION; SEMICONDUCTOR DEVICE MODELS;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 84886448150     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)