Majority Traps Observed in H+- or He+-Implanted Ai-Doped 6H-SiC by Admittance and Deep Level Transient Spectroscopy

Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 379-382

  Reshanov, S A ^a   Klettke, O ^a   Pensl, G ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

Admittance Spectroscopy; Al Related Centers; Deep Level Transient Spectroscopy; Implantation Induced Defects

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; DOPING (ADDITIVES); HELIUM; HYDROGEN; THERMODYNAMIC STABILITY;

BAND GAP;

SILICON CARBIDE;

EID: 0242496941     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

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