Power schottky and p-n diodes on SiC epi-wafers with reduced micropipe density

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 1173-1176

  Syrkin, A ^a   Dmitriev, V ^a   Yakimova, R ^b,c   Henry, A ^c   Janzen E ^c  

^a Technol and Devices Intl Inc   (United States)

^b NORTH CAROLINA STATE UNIVERSITY   (United States)

^c LINKÖPING UNIVERSITY   (Sweden)

Author keywords

Micropipe healing; Schottky diodes; Silicon carbide power diodes

Indexed keywords

CHEMICAL VAPOR DEPOSITION; SCHOTTKY BARRIER DIODES; SILICON CARBIDE; SILICON WAFERS; ELECTRIC BREAKDOWN; EVAPORATION;

CHEMICAL VAPOR DEPOSITIONS (CVD); EDGE TERMINATION; MAXIMUM BREAKDOWN VOLTAGE; MICROPIPE DENSITY; MICROPIPE FILLINGS; MICROPIPES; SCHOTTKY DIODES; SUBLIMATION GROWTH; REDUCED MICROPIPE DENSITY (RMD);

DIODES; SCHOTTKY BARRIER DIODES;

EID: 0036436186     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.389-393.1173     Document Type: Conference Paper

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