Free standing silicon as a compliant substrate for SiGe

Materials Research Society Symposium - Proceedings

Volumn 765, Issue , 2003, Pages 141-146

  Cohen, G M ^a   Mooney, P M ^a   Chu, J O ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; INTERFACES (MATERIALS); RELAXATION PROCESSES; SEMICONDUCTING SILICON; SILICON ON INSULATOR TECHNOLOGY; TENSILE PROPERTIES; X RAY DIFFRACTION ANALYSIS;

SILICON-ON-INSULATOR WAFER; STRAIN RELAXATION; TENSILE STRAIN; THIN FREE-STANDING SILICON FILMS;

SILICON ALLOYS;

EID: 0242493055     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-765-d4.6/g1.6     Document Type: Conference Paper

References (6)

1. P.M. Mooney, Materials Science and Engineering Reports R17, 105, (1996) and references therein.
2. Q.Y. Tong and U. Gosele, Semiconductor Wafer Bonding, John Wiley & Sons, New York, 203, (1999).
3. H. Yin, R. Huang, K.D. Hobart, Z. Suo, T.S. Kuan, C.K. Inoki, S.R. Shieh, T.S. Duffy, F.J. Kub, and J.C. Sturm, J. Appl. Phys., 91(12), 9716, (2002).
4. Y.H. Lou, J.L. Liu, G. Jin, J. Wan, K.L. Wang, C.D. Moore, M.S. Goorsky, C. Chih, and K.N. Tu, Appl. Phys. Lett., 78(9), 1219, (2001).
5. A.M. Jones, J.L. Jewell, J.C. Mabon, E.E. Reuter, S.G. Bishop, S.D. Roh, and J.J. Coleman, Appl. Phys. Lett., 74(7), 1000, (1999).
6. G.M. Cohen, P.M. Mooney, E.C. Jones, K.K. Chahn, P.M. Solomon, and H.-S.P. Wong, Appl. Phys. Lett., 75(6), 787, (1999).