Low Schottky barrier on n-type Si for n-channel Schottky source/drain MOSFETs

Materials Research Society Symposium - Proceedings

Volumn 765, Issue , 2003, Pages 297-302

  Tao, Meng ^a   Udeshi, Darshak ^a   Agarwal, Shruddha ^a   Basit, Nasir ^a   Maldonado, Eduardo ^a   Kirk, Wiley P ^a  

^a University of Texas at Arlington   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CHROMIUM; ELECTRONIC DENSITY OF STATES; INTERFACES (MATERIALS); MOSFET DEVICES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SELENIUM; SEMICONDUCTING SILICON;

ELECTRON AFFINITY; LOW SCHOTTKY BARRIER;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0242493023     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-765-d7.10     Document Type: Conference Paper

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