Modulation of surface barrier in AlGaN/GaN heterostructures

Physica Status Solidi (B) Basic Research

Volumn 234, Issue 3, 2002, Pages 734-737

  Koley, G ^a   Cha, Ho Young ^a   Tilak, V ^a   Eastman, L F ^a   Spencer, M G ^a  

^a Cornell University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0036930224     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3951(200212)234:3<734::AID-PSSB734>3.0.CO;2-C     Document Type: Conference Paper

References (5)

1. O. Ambacher et al., J. Appl. Phys. 85, 3222 (1999).
2. J.A. Smart, A.T Schremer, N.G. Weimann, O. Ambacher, L.F. Eastman, and J.R. Shealy, Appl. Phys. Lett. 75, 388 (1999).
3. L.F. Eastman et al., IEEE Trans. Electron Devices, 48, 479 (2001).
4. G. Koley and M.G. Spencer, J. Appl. Phys. 90, 337 (2001).
5. G. Koley, Ho-Young Cha, C.I. Thomas, and M.G. Spencer, Appl. Phys. Lett. 81, 2282 (2002).