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Volumn , Issue CIRCUITS SYMP., 2002, Pages 206-209

Threshold-voltage balance for minimum supply operation

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC POWER SUPPLIES TO APPARATUS; LEAKAGE CURRENTS; MOSFET DEVICES; THRESHOLD VOLTAGE;

EID: 0242443372     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (3)

References (10)
  • 1
    • 0028562790 scopus 로고
    • Performance fluctuations of 0.10 μm MOSFETs - limitation of 0.1 μm ULSIs
    • T. Mizuno, et al., "Performance fluctuations of 0.10 μm MOSFETs - limitation of 0.1 μm ULSIs," Symposium on VLSI Technology Digest of Technical Papers, pp. 13-14, 1994.
    • (1994) Symposium on VLSI Technology Digest of Technical Papers , pp. 13-14
    • Mizuno, T.1
  • 3
    • 0038177673 scopus 로고    scopus 로고
    • Quantitative study of an SA-Vt CMOS circuit: Evaluation of fluctuation in device and circuit performance
    • G. Ono, et al., "Quantitative study of an SA-Vt CMOS circuit: evaluation of fluctuation in device and circuit performance," International Conference on Solid State Devices and Materials, pp. 374-375, 2000.
    • (2000) International Conference on Solid State Devices and Materials , pp. 374-375
    • Ono, G.1
  • 7
    • 0027698768 scopus 로고
    • Switched-source-impedance CMOS circuit for low standby subthreshold current Giga-scale LSI's
    • Nov.
    • M. Horiguchi, et al., "Switched-source-impedance CMOS circuit for low standby subthreshold current Giga-scale LSI's," IEEE J. Solid-State Circuits, vol. 28, No. 11, pp. 1131-1135, Nov. 1993.
    • (1993) IEEE J. Solid-State Circuits , vol.28 , Issue.11 , pp. 1131-1135
    • Horiguchi, M.1
  • 8
    • 0025415048 scopus 로고
    • Alpha-power law MOSFET model and its applications to CMOS inverter delay and other formulas
    • Apr.
    • T. Sakurai, et al., "Alpha-power law MOSFET model and its applications to CMOS inverter delay and other formulas," IEEE J. Solid-State Circuits, vol. 25, pp. 584-594, Apr. 1990.
    • (1990) IEEE J. Solid-State Circuits , vol.25 , pp. 584-594
    • Sakurai, T.1
  • 9
    • 0015330654 scopus 로고
    • Ion-implanted complementary MOS transistors in low-voltage circuits
    • R. M. Swanson, et al., "Ion-implanted complementary MOS transistors in low-voltage circuits," IEEE J. Solid-State Circuits, vol. sc-7, No. 2, pp. 146-153, 1972.
    • (1972) IEEE J. Solid-State Circuits , vol.sc-7 , Issue.2 , pp. 146-153
    • Swanson, R.M.1
  • 10
    • 0035308547 scopus 로고    scopus 로고
    • The impact of intrinsic device fluctuations on CMOS SRAM cell stability
    • April
    • A. J. Bhavnagarwala, et al., "The impact of intrinsic device fluctuations on CMOS SRAM cell stability," IEEE J. Solid-State Circuits, vol. 36, No. 4, pp. 658-665, April 2001.
    • (2001) IEEE J. Solid-State Circuits , vol.36 , Issue.4 , pp. 658-665
    • Bhavnagarwala, A.J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.