Influence of excess silicon on the surface morphology and defect structure during the initial stages of SiC sublimation growth

Materials Science and Engineering: B

Volumn 61-62, Issue , 1999, Pages 86-88

  Schulz, D ^a   Wagner, G ^a   Doerschel, J ^a   Dolle, J ^a   Eiserbeck, W ^a   Muller, T ^a   Rost, H J ^a   Siehe, D ^a   Wollweber, J ^a  

^a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

Growth schedule; Silicon; Surface morphology

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPOSITION EFFECTS; CRYSTAL DEFECTS; CRYSTAL GROWTH; INTERFACES (MATERIALS); MORPHOLOGY; OPTICAL MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SUBLIMATION;

PHYSICAL VAPOR TRANSPORT (PVT); SUBLIMATION GROWTH;

SEMICONDUCTING FILMS;

MORPHOLOGY;

EID: 4243864245     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00530-3     Document Type: Article

References (4)

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