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Volumn 389-393, Issue 1, 2002, Pages 79-82
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Observation of planar defects in 2-inch SiC wafer
a
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Author keywords
Diameter enlargement; Micropipes; Planar defects; Sublimation; Temperature gradient
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Indexed keywords
CRYSTAL GROWTH;
DEFECTS;
GRAPHITE;
OPTICAL MICROSCOPY;
SILICON CARBIDE;
SINGLE CRYSTALS;
SUBLIMATION;
SILICON WAFERS;
THERMAL GRADIENTS;
DIAMETER ENLARGEMENT;
MICROPIPES;
PLANAR DEFECTS;
TEMPERATURE GRADIENT;
BULK CRYSTALS;
GRAPHITE CRUCIBLES;
GROWTH MODES;
PLANAR DEFECT;
SUBLIMATION METHODS;
SILICON WAFERS;
DEFECTS;
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EID: 4243853048
PISSN: 02555476
EISSN: 16629752
Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.389-393.79 Document Type: Article |
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Times cited : (3)
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References (5)
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