Real Relationship between Acceptor Density and Hole Concentration in Al-Lmplanted 4H-SiC

Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 447-450

  Matsuura, H ^a   Sugiyama, K ^a   Nishikawa, K ^a   Nagata, T ^a   Fukunaga, N ^a  

^a OSAKA ELECTRO COMMUNICATION UNIVERSITY   (Japan)

Author keywords

Acceptor Density; Acceptor Level; Al Implantation; Excited States; Hall Effect Measurement

Indexed keywords

ALUMINUM; COMPUTER SIMULATION; HALL EFFECT; SEMICONDUCTOR DEVICES;

HOLE CONCENTRATION;

SILICON CARBIDE;

EID: 0242413668     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

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