Effect of a magnetic field on the starting stress and mobility of individual dislocations in silicon

Journal of Experimental and Theoretical Physics

Volumn 97, Issue 3, 2003, Pages 601-605

  Badylevich, M V ^a   Iunin, Yu L ^a   Kveder, V V ^a   Orlov, V I ^a   Osip'yan, Yu A ^a  

^a INSTITUTE OF SOLID STATE PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC CONFIGURATION; CZOCHRALSKI METHODS; DISLOCATION CORE; HIGH CONCENTRATION; LOW OXYGEN; OXYGEN COMPLEXES; SINGLET-TRIPLET TRANSITIONS; THERMALLY EXCITED STATE;

BINDING ENERGY; DISSOLUTION; MAGNETIC FIELDS; SILICON COMPOUNDS; SINGLE CRYSTALS;

DISSOLVED OXYGEN;

EID: 0242306972     PISSN: 10637761     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1618345     Document Type: Article

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