Adsorbed Si on the Si(111)-(7×7) surface studied by scanning tunneling microscopic and molecular-orbital approaches: Stationary and diffusing Si adsorbates

Physical Review B - Condensed Matter and Materials Physics

Volumn 66, Issue 16, 2002, Pages 1613161-1613164

  Uchida, Hironaga ^a   Watanabe, Satoshi ^b   Kuramochi, Hiromi ^c   Kim, Jooyoung ^a   Nishimura, Kazuhiro ^a   Inoue, Mitsuteru ^a   Aono, Masakazu ^c  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON;

ADSORPTION; ARTICLE; ATOM; CALCULATION; DIFFUSION; ELECTRON; ENERGY; SCANNING TUNNELING MICROSCOPY; STRUCTURE ANALYSIS; SURFACE PROPERTY;

EID: 4243702844     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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