Emission and reflection spectra from AlxGa1-xN/GaN single heterostructures

Journal of Applied Physics

Volumn 94, Issue 7, 2003, Pages 4263-4266

  Reynolds, D C ^a,b   Hoelscher, J ^a,b   Litton, C W ^a   Collins, T C ^c   Fitch, R ^a   Via, G D ^a   Gillespie, J ^a   Crespo, A ^a   Jenkins, T J ^a   Saxler, A ^d  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b WRIGHT STATE UNIVERSITY   (United States)

^c OKLAHOMA STATE UNIVERSITY   (United States)

^d Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON GAS; EMISSION SPECTROSCOPY; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT REFLECTION; REACTIVE ION ETCHING; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON CARBIDE;

CONDUCTION BANDS;

HETEROJUNCTIONS;

EID: 0142121522     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1603954     Document Type: Article

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