Annealing of defects induced by Ge irradiation of silica probed with variable energy positrons

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 127-128, Issue , 1997, Pages 86-89

  Knights, A P ^a   Allard, L B ^b   Brebner, J L ^b   Simpson, P J ^a  

^a UNIVERSITY OF WESTERN ONTARIO   (Canada)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BAND STRUCTURE; CRYSTAL DEFECTS; ION BOMBARDMENT; ION IMPLANTATION; SEMICONDUCTING GERMANIUM; THERMAL EFFECTS;

VARIABLE ENERGY POSITRONS;

FUSED SILICA;

EID: 0031547796     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(96)00857-9     Document Type: Article

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