Effects of 3 MeV protons irradiation on the electrical properties of silicon detectors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 463, Issue 1-2, 2001, Pages 413-417

  Siad, M ^a   Boussaa, N ^a   Keffous, A ^b   Rahab, H ^b   Menari, H ^b  

^a CENTRE DE RECHERCHE NUCLÉAIRE D ALGER   (Algeria)

^b L'Unite de Developpement de la Technologie du Silicium   (Algeria)

Author keywords

Annealing; Irradiation effects; Silicon detector

Indexed keywords

ANNEALING; ELECTRIC CURRENTS; PROTONS; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS;

SILICON JUNCTION DETECTORS;

PARTICLE DETECTORS;

EID: 0035339509     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(01)00224-8     Document Type: Article

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