Hall effect data analysis of GaN n+n structures

Physica Status Solidi (B) Basic Research

Volumn 234, Issue 3, 2002, Pages 872-876

  Arnaudov, B ^a   Paskova, T ^b   Evtimova, S ^a   Heuken, M ^c   Monemar, B ^b  

^a UNIVERSITY OF SOFIA   (Bulgaria)

^b LINKÖPING UNIVERSITY   (Sweden)

^c AIXTRON AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0036920666     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3951(200212)234:3<872::AID-PSSB872>3.0.CO;2-0     Document Type: Conference Paper

References (6)

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