Characterization of indium nitride films deposited by activated reactive evaporation process

Thin Solid Films

Volumn 444, Issue 1-2, 2003, Pages 52-57

  Patil, Sheetal J ^a   Bodas, Dhananjay S ^a   Mandale, A B ^b   Gangal, S A ^a  

^a UNIVERSITY OF PUNE   (India)

^b NATIONAL CHEMICAL LABORATORY   (India)

Author keywords

Activated reactive evaporation; Indium nitride; Plasma processing and deposition; Structural properties

Indexed keywords

EVAPORATION; INDIUM COMPOUNDS; PLASMAS; X RAY PHOTOELECTRON SPECTROSCOPY;

INDIUM NITRIDE FILMS;

THIN FILMS;

EID: 0142075188     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(03)01097-6     Document Type: Article

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