Amplified Spontaneous Emission Measurement of GaInNAs Laser Wafers with and without Rapid Thermal Annealing

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 8 B, 2003, Pages

  Nakatsuka, Shin'ichi ^a   Kondow, Masahiko ^a   Aoki, Masahiro ^a   Kudo, Makoto ^a   Kitatani, Takeshi ^a   Tsuji, Shinji ^a  

^a HITACHI LTD   (Japan)

Author keywords

Amplified spontaneous emission; GaInNAs; Laser diode; Rapid thermal anneal

Indexed keywords

AMPLIFICATION; CURRENT DENSITY; RAPID THERMAL ANNEALING; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS;

AMPLIFIED SPONTANEOUS EMISSION (ASE);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0142063470     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.l1012     Document Type: Article

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