Ultrahigh-sensitive AlGaAs-GaAs punchthrough heterojunction phototransistor

IEEE Photonics Technology Letters

Volumn 9, Issue 10, 1997, Pages 1391-1393

  Dejun, Han ^a,b   Guohui, Li ^a   Zhang, Yan Feng ^a   Zhu, En Jun ^a  

^a BEIJING NORMAL UNIVERSITY   (China)

^b MCMASTER UNIVERSITY   (Canada)

Author keywords

Guard ring emitter structure; Optical conversion gain; Photodetector; Phototransistor; Sensitivity

Indexed keywords

ELECTRIC CURRENTS; HETEROJUNCTIONS; PHOTODETECTORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES;

GUARD RING EMITTER STRUCTURES;

PHOTOTRANSISTORS;

EID: 0031259486     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.623273     Document Type: Article

References (11)

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