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Volumn 44, Issue 5-6, 2003, Pages 383-390
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Modulation-doping in 3-5 μm GaAs/AlAs/AlGaAs double barrier quantum well infrared photodetectors: An alternative to achieve high photovoltaic performance and high temperature detection
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Author keywords
Infrared photodetectors; Molecular beam epitaxy; Photovoltaic detectors; Quantum well devices
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Indexed keywords
HIGH TEMPERATURE OPERATIONS;
PHOTOVOLTAIC EFFECTS;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTOR DOPING;
SEMICONDUCTOR QUANTUM WELLS;
SUBSTRATES;
DARK CURRENT;
INFRARED DETECTORS;
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EID: 0141938965
PISSN: 13504495
EISSN: None
Source Type: Journal
DOI: 10.1016/S1350-4495(03)00159-2 Document Type: Conference Paper |
Times cited : (14)
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References (16)
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