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Volumn 44, Issue 5-6, 2003, Pages 383-390

Modulation-doping in 3-5 μm GaAs/AlAs/AlGaAs double barrier quantum well infrared photodetectors: An alternative to achieve high photovoltaic performance and high temperature detection

Author keywords

Infrared photodetectors; Molecular beam epitaxy; Photovoltaic detectors; Quantum well devices

Indexed keywords

HIGH TEMPERATURE OPERATIONS; PHOTOVOLTAIC EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

EID: 0141938965     PISSN: 13504495     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1350-4495(03)00159-2     Document Type: Conference Paper
Times cited : (14)

References (16)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.