Growth and characterization of a bound-to-quasi-continuum QWIP with Al-graded triangular confinement barriers

IEEE Photonics Technology Letters

Volumn 11, Issue 12, 1999, Pages 1650-1652

  Guzman A ^a   Sanchez Rojas J L ^a   Tijero, J M G ^b   Hernando, J ^a   Calleja, E ^a   Munoz E ^a   Vergara, G ^c   Almazan R ^c   Gomez L J ^c   Verdu M ^c   Montojo, M T ^c  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b ETSA   (Spain)

^c Ctro Inverstigacion y Desarrollo A   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

LIGHT ABSORPTION; PHOTOCURRENTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS;

QUANTUM WELL INFRARED PHOTODETECTORS (QWIP);

INFRARED DETECTORS;

EID: 0342757822     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.806876     Document Type: Article

References (10)

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