Epitaxial growth of tungsten carbide films using C60 as carbon precursor

Journal of Crystal Growth

Volumn 259, Issue 1-2, 2003, Pages 12-17

  Palmquist, J P ^a   Czigany Zs ^b   Hultman, L ^c   Jansson, U ^a  

^a UPPSALA UNIVERSITY   (Sweden)

^b RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^c LINKÖPING UNIVERSITY   (Sweden)

Author keywords

A1. Reciprocal space mapping; A1. X ray diffraction; A3. Epitaxial growth; A3. Physical vapour deposition; B1. Ternary carbide; B1. Tungsten carbide

Indexed keywords

EPITAXIAL GROWTH; FULLERENES; MAGNETRON SPUTTERING; NUCLEATION; TRANSMISSION ELECTRON MICROSCOPY; TUNGSTEN CARBIDE; X RAY DIFFRACTION;

RECIPROCAL SPACE MAPPING;

THIN FILMS;

EID: 0141884989     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)01572-0     Document Type: Article

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