Imaging capability of low energy electron beam proximity projection lithography toward the 65/45nm node

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5037 II, Issue , 2003, Pages 611-621

  Nakano, Hiroyuki ^a   Nohdo, Shinichiro ^a   Oguni, Kumiko ^a   Motohashi, Tomonori ^a   Yoshizawa, Masaki ^a   Kitagawa, Tetsuya ^a   Moriya, Shigeru ^a  

^a Sony Corporation Semiconductor Network Company   (Japan)

Author keywords

45 nm; 65 nm; Dose latitude; LEEPL; Multi layer resist; NGL; Resolution; Spin on glass; Thin resist

Indexed keywords

ALGORITHMS; ELECTRON OPTICS; IMAGING SYSTEMS; OPTICAL GLASS; OPTICAL MULTILAYERS; OPTIMIZATION; PHOTOLITHOGRAPHY; PHOTORESISTS; SUBSTRATES;

CHEMICALLY AMPLIFIED RESIST; LOW ENERGY ELECTRON BEAM PROXIMITY PROJECTION LITHOGRAPHY; MULTILAYER RESIST; SPIN ON GLASS LAYER;

ELECTRON BEAM LITHOGRAPHY;

EID: 0141836031     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.484429     Document Type: Conference Paper

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