Completion of the β tool and the recent progress of low energy e-beam proximity projection lithography

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 1 SPEC., 2003, Pages 311-315

  Endo, Akihiro ^a   Higuchi, Akira ^a   Nozue, Hiroshi ^a   Shimazu, Nobuo ^a   Fukui, Toyoji ^b   Yasumitsu, Naoki ^c   Miyatake, Tsutomu ^c   Anazawa, Norimichi ^d  

^a LEEPL Corporation   (Japan)

^b Tokyo Seimitsu Co Ltd   (Japan)

^c SUMITOMO HEAVY INDUSTRIES LTD   (Japan)

^d Holon Co Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MASKS; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SENSITIVITY ANALYSIS; SILICON CARBIDE; SILICON WAFERS; THICKNESS MEASUREMENT;

LOW ENERGY ELECTRON BEAM PROXIMITY PROJECTION LITHOGRAPHY; MASK ALIGNMENT; MASS PRODUCTION TOOL;

ELECTRON BEAM LITHOGRAPHY;

EID: 0037207722     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1540987     Document Type: Article

References (6)

1. A. Endo, A. Higuchi, H. Kasahara, H. Nozue, N. Shimazu, T. Fukui, N. Yasumitsu, T. Miyatake, and N. Anazawa, Conference of Photopolymer Science and Technology '2002 (to be published).
2. SiC and SiN stencil mask, silicon-containing resist, and the resist process are developed and supplied by NTT Advanced Technology Corp. (NTT-AT).
3. T. Morosawa, K. Saito, Y. Takeda, T. Kunioka, A. Shimizu, J. Kato, T. Matsuda, and Y. Kuriyama, J. Vac. Sci. Technol. B 17, 2907 (1999).
4. ZEP520 resist in manufactured by Nippon Zeon Co., Ltd.
5. T. Miyatake and M. Hirose, J. Vac. Sci. Technol. B 15, 2471 (1997).
6. T. Miyatake, M. Hirose, T. Shoki, R. Ohkubo, and K. Yamazaki, J. Vac. Sci. Technol. B 16, 3471 (1998).