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Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5039 I, Issue , 2003, Pages 113-120

F2 resist outgassing studied by in-situ QCM technique

(5) Shirai, Masamitsu a Shinozuka, Toyofumi a Tsunooka, Masahiro a Ishikawa, Seiich b Itani, Toshiro b

a Osaka Prefecture University (Japan)

b SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC (Japan)

Author keywords

F2 resist; Fluoropolymers; In situ QCM technique; Outgassing; Photoacid generators; Photodegradation

Indexed keywords

DEGASSING; FLUORINE CONTAINING POLYMERS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; PHOTODEGRADATION; ULTRAVIOLET RADIATION;

ACID LABILE PROTECTING GROUPS; DIPHENYLIODONIUM NONAFLATE; DIPHENYLIODONIUM TRIFLATE; FLUORINATED CYCLOPOLYMERS; PHOTOACID GENERATORS; POLYMETHACRYLONITRILE; QUARTZ CRYSTAL MICROBALANCE METHOD; TRIPHENYLSULFONIUM NONAFLATE; TRIPHENYLSULFONIUM TRIFLATE;

PHOTORESISTS;

EID: 0141834837 PISSN: 0277786X EISSN: None Source Type: Conference Proceeding
DOI: 10.1117/12.485090 Document Type: Conference Paper

Times cited : (10)

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