Thin copper films prepared by chemical vapor deposition on glass-ceramic substrates

Qinghua Daxue Xuebao/Journal of Tsinghua University

Volumn 43, Issue 6, 2003, Pages 808-810

  Liu, Yangqiu ^a   Liang, Tongxiang ^a   Fu, Xiaoming ^a   Ni, Xiaojun ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

Chemical vapor deposition; Cu thin film; Film integrated circuits; Glass ceramic; Hybrid integrated circuits

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COPPER DEPOSITS; ELECTRONICS PACKAGING; INTEGRATED CIRCUITS; THIN FILMS;

COPPER THIN FILM; FILM INTEGRATED CIRCUITS;

GLASS CERAMICS;

EID: 0141818376     PISSN: 10000054     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (7)

1. Tummala R R, Rymaszewski E J, Klopfenstein A G. Microelectronics Packaging Handbook [M]. Boston, Massachusetts. USA, Kluwer Academic Publishers, 2000.
2. Maruyama T, Shirai T. Copper thin films prepared by chemical vapor deposition from copper acetylacetonate [J]. J Mater Sci, 1995, 30: 5551-5553.
3. Choi K K, Rhee S W. Chemical vapor deposition of copper film from hexafluoroacetyl-acetonate Cu vinylcycohesane [J]. Thin Solid Films, 2001, 397: 70-77.
4. Gandikota S, Voss S, Tao R, et al. Adhesion studies of CVD copper metallization [J]. Microelectronic Eng, 2000, 50: 547-553.
5. Voss S, Gandikota S, Chen L Y. Chemical studies of CVD Cu deposited on TA and TaN barriers under various process conditions [J]. Microelectronic Eng, 2000, 50: 501-508.
6. Chen J S, Lu K Y. Thermal stability of Cu/TiN and Cu/Ti/TiN metallizations on silicon [J]. Thin Solid Films, 2001, 396: 205-209.
7. Lee C, Gong Y S, Lin J C. Interdiffusion and reactions in the Cu/TiN/Si thin film system [J]. Applied Surface Science, 1996, 92: 335-339.