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Volumn 150, Issue 9, 2003, Pages

Calculation of Size Distribution of Void Defects in CZ Silicon

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTAL GROWTH; DIFFUSION; NUCLEATION;

EID: 0141788366     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1599854     Document Type: Article
Times cited : (14)

References (19)
  • 4
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    • M. Tamatsuka, N. Kobayashi, S. Tobe, and T. Masui, in Defects in Silicon III, T. Abe, W. M. Bullis, S. Kobayashi, W. Lin, and P. Wagner, Editors, p. 456, The Electrochemical Society, Proceedings Series, Pennington, NJ (1999).
    • (1999) Defects in Silicon III , pp. 456
    • Tamatsuka, M.1    Kobayashi, N.2    Tobe, S.3    Masui, T.4
  • 7
    • 33646217873 scopus 로고    scopus 로고
    • C. Claeys, P. Rai-Choudhury, M. Watanabe, P. Stallhofer, and H. J. Dawson, Editors, The Electrochemical Society Proceedings Series, Pennington, NJ
    • T. Mori, Z. Wang, and R. A. Brown, in High Purity Silicon VI, C. Claeys, P. Rai-Choudhury, M. Watanabe, P. Stallhofer, and H. J. Dawson, Editors, p. 118, The Electrochemical Society Proceedings Series, Pennington, NJ (2000).
    • (2000) High Purity Silicon VI , pp. 118
    • Mori, T.1    Wang, Z.2    Brown, R.A.3
  • 10
    • 0000431713 scopus 로고    scopus 로고
    • C. Claeys, P. Stallhofer, and J. E. A. Maurits, Editors, PV 96-13, The Electrochemical Society Proceedings Series, Pennington, NJ
    • E. Dornberger, W. v. Ammon, D. Graf, U. Lambert, A. Millet, H. Oelkrug, and A. Ehlert, in High-Purity Silicon IV, C. Claeys, P. Stallhofer, and J. E. A. Maurits, Editors, PV 96-13, p. 140, The Electrochemical Society Proceedings Series, Pennington, NJ (1996).
    • (1996) High-Purity Silicon IV , pp. 140
    • Dornberger, E.1    Ammon, W.V.2    Graf, D.3    Lambert, U.4    Millet, A.5    Oelkrug, H.6    Ehlert, A.7
  • 12
    • 0025590904 scopus 로고
    • H. R. Huff, K. G. Barraclough, and J. Chikawa, Editors, The Electrochemical Society Proceedings Series, Pennington, NJ
    • S. Miyahara, S. Kobayashi, T. Fujiwara, T. Kubo, and H. Fujiwara, in Semiconductor Silicon, H. R. Huff, K. G. Barraclough, and J. Chikawa, Editors, p. 94, The Electrochemical Society Proceedings Series, Pennington, NJ (1990).
    • (1990) Semiconductor Silicon , pp. 94
    • Miyahara, S.1    Kobayashi, S.2    Fujiwara, T.3    Kubo, T.4    Fujiwara, H.5
  • 19
    • 0002585097 scopus 로고
    • H. R. Huff, R. J. Kriegler, and Y. Takeishi, Editors, The Electrochemical Society Proceedings Series, Pennington, NJ
    • R. A. Craven, in Semiconductor Silicon, H. R. Huff, R. J. Kriegler, and Y. Takeishi, Editors, p. 254, The Electrochemical Society Proceedings Series, Pennington, NJ (1981).
    • (1981) Semiconductor Silicon , pp. 254
    • Craven, R.A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.