An improved Notch model for resist dissolution in lithography simulation

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4345, Issue 1, 2001, Pages 912-920

  Robertson, Stewart ^a   Pavelchek, Edward ^a   Hoppe, Wolfgang ^b   Wildfeuer, Robert ^b  

^a SHIPLEY COMPANY   (United States)

^b SIGMA C   (Germany)

Author keywords

Dissolution rate equation; Lithography simulation; Photoresist development

Indexed keywords

COMPUTER SIMULATION; DISSOLUTION; EXPOSURE CONTROLS; FEATURE EXTRACTION; FOCUSING; MATHEMATICAL MODELS; RATE CONSTANTS;

DISSOLUTION RATE EQUATIONS;

PHOTORESISTS;

EID: 0034768847     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.436815     Document Type: Article

References (16)

1. Optical lithography
2. Characterization of positive photoresist
3. In-situ measurement of dielectric thickness during etching or developing processes
4. Modeling projection printing of positive photoresists
5. Advanced topics in lithography modeling
6. A comparison of recent development models in optical lithography simulation
7. A new development model for lithography simulation
8. Notch model for photoresist dissolution
9. Development of positive photoresist
10. The modelling of post exposure bake and surface inhibition effects in positive photoresist using absolute thickness data
11. Development of positive photoresists
12. Study of the relationship between exposure margin and photolithographic process latitude and mask linearity
13. Characterization and modeling of high resolution positive photoresists
14. New kinetic model for resist dissolution
15. Experimental investigation of a novel dissolution model
16. Factors affecting pitch bias in lithography simulation