The impact of mask topography and resist effects on optical proximity correction in advanced alternating phase shift process

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5040 I, Issue , 2003, Pages 313-326

  Cheng, Mosong ^a   Ho, Benjamin ^b   Guenther, Doug ^c  

^a TEXAS A AND M UNIVERSITY   (United States)

^b TOKYO ELECTRON AMERICA INC   (United States)

^c SEMATECH   (United States)

Author keywords

Mask topography; Partial coherence; Perturbation; Phase shift mask; Photolithography; Polarization; Resist

Indexed keywords

COMPUTER SIMULATION; LIGHT POLARIZATION; MASKS; MATHEMATICAL MODELS; PERTURBATION TECHNIQUES; PHASE SHIFT;

ELECTROMAGNETIC MODEL; MASK TOPOGRAPHY; OPTICAL PROXIMITY CORRECTION; PATTERN TRANSFER; PHASE SHIFT MASKS; RESIST EFFECTS;

PHOTOLITHOGRAPHY;

EID: 0141722435     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.485508     Document Type: Conference Paper

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