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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 7 B, 2003, Pages

Photoluminescence from ultrathin InAs/GaAs single quantum wells grown on GaAs (111)A substrates

(7) Mashita, Masao a Numata, Toshifumi a Nakazawa, Hideki a Kajikawa, Yasutomo b Koo, Bon Heun c Makino, Hisao d Yao, Takafumi d

a HIROSAKI UNIVERSITY (Japan)

b SHIMANE UNIVERSITY (Japan)

c Changwon National University (South Korea)

d TOHOKU UNIVERSITY (Japan)

Author keywords

Compound semiconductor; Large lattice mismatch; Molecular beam epitaxy; Photoluminescence; Piezoelectric field; Quantum well; Strain relaxation

Indexed keywords

ATOMS; DIFFUSION; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; MONOLAYERS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES; ULTRATHIN FILMS;

LATTICE MISMATCH; SINGLE QUANTUM WELL;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0141718447 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.42.l807 Document Type: Letter

Times cited : (5)

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