Indium reevaporation during molecular beam epitaxial growth of InGaAs layers on GaAs substrates

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 7 B, 2000, Pages 4435-4437

  Mashita, Masao ^a   Hiyama, Yoshihito ^a   Arai, Kenta ^b   Koo, Bon Heun ^b   Yao, Takafumi ^b  

^a HIROSAKI UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

Incorporation fraction; InGaAs; Lattice mismatch; Molecular beam epitaxy; Reevaporation; Surface segregation

Indexed keywords

ACTIVATION ENERGY; COMPRESSIVE STRESS; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SUBSTRATES; TENSILE STRESS;

INDIUM REEVAPORATION; LATTICE MISMATCH;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 0034225336     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.4435     Document Type: Article

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